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Si3460DV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.2
0.1
30
24
I D = 1 mA
0.0
18
- 0.1
- 0.2
12
T A = 25 °C
- 0.3
6
- 0.4
- 50
- 25
0
25 50 75 100
125
150
0
10 - 2
10 - 1
1
10
100
600
T J - Temperature (°C)
Threshold Voltage
Time (s)
Single Pulse Power
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
P DM
t 1
t 1
t 2
0.02
Single Pulse
t 2
1. Duty Cycle, D =
2. Per Unit Base = R thJA = 90 °C/W
3. T JM - T A = P DM Z thJA(t)
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 - 4
10 - 3
10 - 2
10 - 1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71329 .
www.vishay.com
4
Document Number: 71329
S09-0531-Rev. D, 06-Apr-09
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